A tiny change at the boundary between two oxide layers may point to a less power-hungry future for artificial intelligence.

Electronic devices power everyday life, from smartphones to medical sensors. Yet, as these gadgets grow in number, so does the mounting challenge of electronic waste, or e-waste. Physically transient ...

A major breakthrough in the field of computer memory has just been achieved by Japanese researchers. They have developed a new universal memory technology, surpassing current computer modules in speed ...

A research team led by Prof. Long Shibing from the University of Science and Technology of China (USTC) of the Chinese Academy of Sciences (CAS) has, for the first time, made spintronic neuromorphic ...

Researchers have developed a new kind of nanoelectronic device that could dramatically cut the energy consumed by artificial ...

Materials with high magnetoelectric coupling could be useful in novel devices such as magnetic computer memories, chemical sensors and quantum computers. When researchers irradiate a thin layer of ...

TOKYO--(BUSINESS WIRE)--Kioxia Corporation, a world leader in memory solutions, today announced that it has begun sampling new Universal Flash Storage 1 (UFS) Ver. 4.1 embedded memory devices with ...

Shrinking ferroelectric tunnel junctions can significantly boost their performance in memory devices, as reported by researchers from Science Tokyo. The team fabricated nanoscale junctions directly on ...

The storage element in NAND flash memory is the floating gate MOSFET transistor. These devices are similar to a standard MOSFET device, other than there is an addition isolated gate. When a NAND flash ...